Search results for "infrared detectors"
showing 3 items of 3 documents
Wide range local resistance imaging on fragile materials by conducting probe atomic force microscopy in intermittent contact mode
2016
International audience; An imaging technique associating a slowly intermittent contact mode of atomic force microscopy (AFM) with a home-made multi-purpose resistance sensing device is presented. It aims at extending the widespread resistance measurements classically operated in contact mode AFM to broaden their application fields to soft materials (molecular electronics, biology) and fragile or weakly anchored nano-objects, for which nanoscale electrical characterization is highly demanded and often proves to be a challenging task in contact mode. Compared with the state of the art concerning less aggressive solutions for AFM electrical imaging, our technique brings a significantly wider r…
GRAPHENE-BASED TRANSISTORS AND DETECTORS: FABRICATION AND CHARACTERIZATION
Carbon and carbon-based systems have always attracted great attention thanks to the almost unlimited different structures they can be arranged in and the equally varied physical properties they own. These characteristics are mainly related to the flexibility of carbon bonding, which makes carbon an extremely versatile “building block” material. Most of the typical properties of each carbon-based system are mainly associated with the dimensionality of the structure itself. In this framework, graphene, the first two-dimensional atomic crystal available to the scientific community, has revealed to play a key role in terms of fundamental physics and potential applications, despite its short sto…
Employing Microwave Graphene Field Effect Transistors for Infrared Radiation Detection
2018
In this work, we investigate the possibility of employing graphene field effect transistors, specifically designed for microwave applications, as infrared detectors for telecom applications. Our devices have been fabricated on a sapphire substrate employing CVD-grown transferred graphene. The roles of both the gate dielectric and the DC bias conditions have been evaluated in order to maximize the infrared generated signal through an experimental investigation of the signal-to-noise ratio dependence on the transistor operating point.